Dual N & P-Channel PowerTrench® MOSFET 150V

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Overview

These Dual N and P-Channel enhancement mode Power MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Shrinking the area needed for implementation of active clamp topology; enabling best in class power density.

  • This product is general usage and suitable for many different applications.
  • Q1: N-Channel
    Max rDS(on) = 152 mΩ at VGS = 10 V, ID = 2.4 A
    Max rDS(on) = 212 mΩ at VGS = 6 V, ID = 2 A
  • Q2: P-Channel
    Max rDS(on) = 1200 mΩ at VGS = -10 V, ID = -0.9 A
    Max rDS(on) = 1400 mΩ at VGS = -6 V, ID = -0.8 A
  • Optimised for active clamp forward converters
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC8097AC

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Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

-150

155

Complementary

Dual

25

4

2.4

1.9

~NA~

~NA~

7.2

1.2

279

$1.7547

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