Small Signal MOSFETs | FDC6392S

P-Channel PowerTrench® MOSFET and Integrated Schottky Diode 20V -2.2A, 150mΩ

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Overview

The FDC6392S combines the exceptional performance of PowerTrench MOSFET technology with very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

  • This product is general usage and suitable for many different applications.
  • -2.2A, -20V
  • RDS(ON) = 150 mΩ @ VGS = -4.5V
  • RDS(ON) = 200 mΩ @ VGS = -2.5V
  • Low Gate Charge (3.7nC typ)
  • Compact industry standard SuperSOT™-6 package
  • Schottky:
     VF < 0.45 V @ 1 A

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC6392S

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Obsolete

CAD Model

Pb

A

H

P

TSOT-23-6

419AG

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Single

0

-20

-

12

-1.5

-2.2

0.96

NA

200

-

3.7

NA

-

-

-

-

Price N/A

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