FDC6392S

P-Channel PowerTrench^® MOSFET and Integrated Schottky Diode 20V -2.2A, 150mΩ

Overview

The FDC6392S combines the exceptional performance of PowerTrench MOSFET technology with very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

Applications

This product is general usage and suitable for many different applications.

Features

-2.2A, -20V
R_DS(ON) = 150 mΩ @ V_GS = -4.5V
R_DS(ON) = 200 mΩ @ V_GS = -2.5V
Low Gate Charge (3.7nC typ)
Compact industry standard SuperSOT™-6 package
Schottky:
V_F < 0.45 V @ 1 A

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDC6392S

Obsolete

TSOT-23-6

419AG

260

REEL

3000

-20

P-Channel

Single

-1.5

-2.2

0.96

200

150

3.7

369

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDC6392S

P-Channel PowerTrench® MOSFET and Integrated Schottky Diode 20V -2.2A, 150mΩ

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P-Channel PowerTrench^® MOSFET and Integrated Schottky Diode 20V -2.2A, 150mΩ