P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.5A, 80mΩ

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Overview

This P-Channel 2.5V specified MOSFET uses a low voltage PowerTrench® process. It has been optimized for battery power management applications.

  • This product is general usage and suitable for many different applications.
  • -3.5 A, -20 V
  • RDS(ON) = 80 mΩ @ VGS = -4.5 V
  • RDS(ON) = 110 mΩ @ VGS = -2.5 V
  • Low gate charge (7.2 nC typical)
  • High performance trench technology for extremelylow RDS(ON)

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC634P

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

-20

-

P-Channel

Single

8

-1.5

-3.5

1.6

110

80

8

7.2

779

$0.2072

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