Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, TO-220F

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Overview

SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

  • Lightning
  • Adapter
  • AC-DC Power Supply
  • LED Lighting & Ballast
  • Note book and ATX power
  • LED TV & LCD TV
  • 650 V at TJ = 150°C
  • Max. RDS(on) = 600 mΩ
  • Ultra Low Gate Charge ( Typ. Qg = 20 nC )
  • Low Effective Output Capacitance ( Typ. Coss.eff = 74 pF )
  • 100% Avalanche Tested
  • ESD Improved Capacity

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCPF600N60ZL1

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

N

600

600

N-Channel

Single

±20

3.5

7.4

28

-

-

-

20

840

Price N/A

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