Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 16 A, 260 mΩ, TO-220F

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Overview

SuperFET® is, ON Semiconductor's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

  • 650V @TJ = 150°C
  • Typ. Rds(on) = 0.22O
  • Ultra low gate charge (typ. Qg=55nC)
  • Low effective output capacitance (typ. Coss.eff=110pF)
  • 100% avalanche tested

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCPF16N60

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

Y

600

260

N-Channel

Single

±30

5

16

37.9

-

-

-

55

1630

$2.1637

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