Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

EMH2801: P-Channel Power MOSFET, -20V, -3A, 85mΩ, Single EMH8 with Schottky Diode

Product Description
EMH2801 is a P-Channel Power MOSFET, -20V, -3A, 85mΩ, Single EMH8 with Schottky Diode for General-Purpose Switching Device Applications.
Features
 
  • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
    facilitating high-density mounting
  • MOSFET : Low ON-resistance
  • MOSFET : 1.8V drive
  • SBD : Small switching noise
  • SBD : Low forward voltage (IF = 2.0A, VF max = 0.46V)
  • Halogen free compliance
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     P-Channel Power MOSFET, -20V, -3A, 85mΩ, Single EMH8 with Schottky Diode   P-Channel   with Schottky Diode   -20   10   -1.3   -3   1   137   85     4     1.1     320   66   50   SOT-383FL / EMH-8 
Package Availability
Type
PB free
Standard
SOT-383FL / EMH-8 x