Complementary Bipolar Digital Transistor (BRT)

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Overview

This dual die device contains a Low Vce(sat) PNP Transistor and an electrically isolated NPN Transistor with a Monolithic Bias Resistor Network.

  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • TBD
  • This is a Pb-Free Device
  • These are Pb-Free Devices

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2

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

hFE Min

R1 (kΩ)

R2 (kΩ)

R1/R2 Typ

Vi(off) Max (V)

Vi(on) Min (V)

Reference Price

EMF5XV6T1G

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Active

CAD Model

Pb

A

H

P

SOT-563

1

260

REEL

4000

F

Dual NPN BRT & PNP TXR

0.1

50

80

47

47

1

0

0

Price N/A

More Details

EMF5XV6T5G

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Obsolete

CAD Model

Pb

A

H

P

SOT-563

1

260

REEL

8000

N

Dual NPN BRT & PNP TXR

0.1

50

80

47

47

1

-

-

Price N/A

More Details

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