feedback
Rate this webpage

Need
Support?


ECH8315: Power MOSFET, -30V, 25mΩ, -7.5A, Single P-Channel

Overview
Specifications
Datasheet: Power MOSFET, -30V, 25mOhm, -7.5A, Single P-Channel
Rev. 2 (614kB)
»View Material Composition
»Product Change Notification (2)
Product Overview
Product Description
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements.
Features   Benefits
     
  • Low On-Resistance
 
  • Improves Efficiency by Reducing Conduction Losses. Reduces Heat Dissipation
  • ESD Diode-Protected Gate
 
  • ESD Resistance
  • Pb-Free, Halogen Free and RoHS compliance
 
  • Environmental Consideration
  • 4.0V drive
   
Applications   End Products
  • Load Switch
  • Protection Switch for Lithium-ion Battery
  • Motor Driver
 
  • Digital Still Camera, Wireless speaker
  • Inkjet Printer, Fan Motor , LiB Charger
Technical Documentation & Design Resources
Simulation Models (1) Package Drawings (1)
Data Sheets (1)  
Availability and Samples
Product
Status
Compliance
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Case Outline
Type
Qty.
ECH8315-TL-H Active, Not Rec
Pb-free
Halide free
Power MOSFET, -30V, 25mΩ, -7.5A, Single P-Channel SOT-28 FL / ECH-8 318BF 1 Tape and Reel 3000 $0.236
ECH8315-TL-W Active 
Pb-free
Halide free
Power MOSFET, -30V, 25mΩ, -7.5A, Single P-Channel SOT-28 FL / ECH-8 318BF 1 Tape and Reel 3000 $0.2267
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) : Contact Factory
Mouser   (2015-07-09) : >1K
Market Leadtime (weeks) : 4 to 8
Datasheet: Power MOSFET, -30V, 25mOhm, -7.5A, Single P-Channel
Rev. 2 (614kB)
»View Material Composition
»Product Change Notification (2)
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET, -30V, 25mΩ, -7.5A, Single P-Channel   P-Channel   Single   -30   20   -2.6   -7.5   1.5     44   25     18   4.7     875   200   150   SOT-28 FL / ECH-8 
Previously Viewed Products
Clear List

New Products
 

NTP8G202N  Power GaN Cascode Transistor, 600 V, 290 mΩ Single N-Channel

  • Fast switching
  • Extremely low Qrr
  • High efficiencies

NDBA100N10B  NDPL100N10B  Power N-Channel MOSFETs, 100 V, 100 A

  • Low on-resistance as low as 6.9 mΩ
  • Low gate charge of 35 nC, and high speed switching
  • D2PAK and TO-220 available