BUZ11

N-Channel Power MOSFET 50V, 30A, 40mΩ

Overview

This is an N-Channel enhancement mode silicon gate power MOSFET designed for applications such asswitching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingtransistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits.Formerly developmental type TA9771.

Applications

Features

30A, 50V
R_DS(ON)= 0.040Ω
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Material Composition

Product Change Notification

Product List

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

BUZ11-NR4941

Active

TO-220-3

340AT

TUBE

800

N-Channel

Single

±20

1500

$0.4583

Product Number:

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MOSFETs | BUZ11

N-Channel Power MOSFET 50V, 30A, 40mΩ

Overview

Product List

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