BSS138_F085

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 220mA, 3.5Ω

Overview

These N-Channel enhancement mode field effect tran sistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while pro vide rugged, reliable, and fast switching perfor mance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and otherswitching applications.

Applications

General Low Voltage and Low Current Application
Small Servo Motor Control
Power MOSFET Gate Drivers
General Switching Applications

Features

0.22 A, 50 V
R_DS(ON) = 3.5Ω @ V_GS = 10 V
R_DS(ON) = 6.0Ω @ V_GS = 4.5 V
High density cell design for extremely low R_DS(ON)
Rugged and Reliable
Compact industry standard SOT-23 surface mount package

Material Composition

Product Change Notification

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

BSS138-F085

Obsolete

SOT-23-3

318BM

260

REEL

3000

3500

N-Channel

Single

±20

1.5

0.22

0.36

6000

2.4

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | BSS138_F085

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 220mA, 3.5Ω

Overview

Product List

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