10 A, 100 V PNP Darlington Bipolar Power Transistor

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Overview

The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.

  • High DC Current Gain -
    hFE = 2500 (typ.) at IC = 4.0
  • Collector-Emitter Sustaining Voltage at 100 mAdc
    VCEO(sus) = 80 Vdc (min.) BDX33B, 34B
    VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
  • Low Collector-Emitter Saturation Voltage
    CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
  • Monolithic Construction with Build-In Base-Emitter Shunt resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available

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IC Continuous (A)

V(BR)CEO Min (V)

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Reference Price

BDX34CG

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CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

50

N

PNP

10

100

2.5

0.75

-

-

Price N/A

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