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For complete documentation, see the data sheet.

Printed On: 7/11/2015

2N6341: 25 A, 150 V NPN Bipolar Power Transistor

Product Description
The Power 25A 150 V Bipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications.
Features
 
  • High Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 Vdc (Min) 2N6338
    VCEO(sus) = 150 Vdc (Min) - 2N6341
  • High DC Current Gain
    hFE = 30 - 120 @ IC = 10 Adc
    hFE = 12 (Min) @ IC = 25 Adc
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
  • Fast Switching Times @ IC = 10 Adc
    tr = 0.3 µs (Max)
    ts = 1.0 µs (Max)
    tf = 0.25 µs (Max)
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
Selected Electrical Specifications

Product Compliance Status Description Polarity IC Continuous (A) V(BR)CEO Min (V) hFE Min hFE Max fT Min (MHz) PTM Max (W) Package Type
 Pb-free   Active     25 A, 150 V NPN Bipolar Power Transistor   NPN   25   150   30   120   40   200   TO-204-2 
Package Availability
Type
PB free
Standard
TO-204-2 x