2N6045: 8.0 A, 100 V NPN Darlington Bipolar Power Transistor

Datasheet: Plastic Medium-Power Complementary Silicon Transistors Rev. 9 (187.0kB)	»View Reliability Data »View Material Composition »Product Change Notification (10)
Product Overview

The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP); and 2N6043, 2N6045 (NPN) are complementary devices.

Features
High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage - @ 100 mAdc - VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043 VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044 VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045
Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44 VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Pb-Free Packages are Available

Technical Documentation & Design Resources
Simulation Models (4)	Package Drawings (1)
Data Sheets (1)