2N3055: 15 A, 60 V NPN Bipolar Power Transistor

Overview
Specifications
Packages
Datasheet: Complementary Silicon Power Transistors
Rev. 6 (70.0kB)
»View Reliability Data
»View Material Composition
»Product Change Notification (3)
Product Overview
Product Description
The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.
Features
 
  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available
Technical Documentation & Design Resources
Simulation Models (4) Package Drawings (1)
Data Sheets (1)  
Availability and Samples
Product
Status
Compliance
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Case Outline
Type
Qty.
2N3055G Active
Pb-free
15 A, 60 V NPN Bipolar Power Transistor TO-204-2 1-07 Tray Foam 100 $1.008
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) :
Avnet   (2014-10-03 00:00) : <1K
Digi-Key   (2014-10-03 00:00) : >1K
Future Electronics   (2014-10-03 00:00) : <1K
Mouser   (2014-10-03 00:00) : <1K
Newark   (2014-10-03 00:00) : >1K
Datasheet: Complementary Silicon Power Transistors
Rev. 6 (70.0kB)
»View Reliability Data
»View Material Composition
»Product Change Notification (3)
Product Overview

Product Compliance Status Description Polarity IC Continuous (A) V(BR)CEO Min (V) hFE Min hFE Max fT Min (MHz) PTM Max (W) Package Type
 Pb-free   Active     15 A, 60 V NPN Bipolar Power Transistor   NPN   15   60   20   70   2.5   115   TO-204-2 
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