| Product Description |
The High Q™ Integrated Passive Device (IPD) process technology from ON Semiconductor offers a copper on high resistivity silicon platform ideal for the production of passive
devices such as baluns, filters, couplers, and diplexers that are used in portable, wireless and RF applications. IPD provides a cost effective solution
for RF system in package. A foundry shuttle service is available for engineering prototypes. IPD technology supports fabrication of copper inductors,
precision capacitors, and precision resistors in a world-class 200 mm wafer manufacturing facility. Design services are offered for custom applications.
A full feature design kit is available to customers for layout, simulation, and verification.
|
| Features |
- High-Q™ copper inductor
- MIM capacitor
- TiN metal resistor
- Three metal routing layers (1 Al, 2 Cu)
- 200 mm silicon wafer diameter
- High resistivity silicon substrate
- Planar dual damascene copper process
- Superior process control
- Full feature design kit
- Design services
- Foundry shuttle service
- Smaller area than discrete solutions
- Thinner than LTCC
- Lower cost than GaAs
- Better performance than other silicon
solutions
Process Characteristics
| Si HRS Substrate |
1.5 kΩ∙cm |
| MIM Capacitance density |
0.62 fF/µm² |
| Resistor Sheet Resistance |
9 Ω/square |
| Inductor Sheet Resistance |
3.5 mΩ/square |
| Base Si Oxide Thickness |
5.6 µm |
| MIM Operating Voltage |
20 V |
| M1 Al Metal Thickness |
2 µm |
| MN Cu Metal Thickness |
5 µm |
| MN2 Cu Metal Thickness |
5 µm |
| Bond Pad |
Wirebond, Flip-Chip |
Sample Process Options
| Options |
Mask Layers |
| IPD1 |
1 Al, 1 Cu metal layers |
| IPD2 |
1 Al, 2 Cu metal layers |
| Metal resistor |
Yes/No |
MIM dielectric
thickness |
1 kÅ standard, 2 kÅ option |
| Bond Pad |
Wirebond, Flip-Chip |
|
| Device Characteristics |
|
(All Values Typical at 25°C)
Inductors
| Parameter |
Typical
Value |
Unit |
| Copper Thickness |
5, 10 |
µm |
| Min Width |
5 |
µm |
| Max Width |
40 |
µm |
| Min Space |
3 |
µm |
| Min Inner Diameter |
50 |
µm |
| Recommended Range |
1-50 |
nH |
| Peak Q |
25-45 |
|
Resistors
| Parameter |
Typical
Value |
Unit |
| Min Width |
2 |
µm |
| Min Length |
9 |
µm |
Capacitors
| Poly/GateOx/N-Well |
Typical
Value |
Unit |
| Min Width |
15.75 |
µm |
| Max Width |
450 |
µm |
| Max Area |
45000 |
µm² |
| Recommended Range |
1-100 |
pF |
|
|
|
|
| CAD Tool Compatibility |
| Schematic Capture |
| Cadence Vertuoso |
| Simulation |
| Angsoft HFSS |
| Agilent ADS |
| Place and Route |
| Cadence Virtuoso |
| Physical Verification |
| Cadence Assura |
| Mentor Calibre |
|
| For more information please contact your local sales support at www.onsemi.com |
